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Title: Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 mu m Gate-Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 degrees C
Authors: Marcon, Denis ×
Van Hove, Marleen
Visalli, Domenica
Derluyn, Joff
Das, Jo
Medjdoub, Farid
Degroote, Stefan
Leys, Maarten
Cheng, Kai
Mertens, Robert
Germain, Marianne
Borghs, Gustaaf #
Issue Date: 2010
Publisher: Institute of Pure and Applied
Series Title: Japanese Journal of Applied Physics vol:49 issue:4
Article number: 04DF07
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
× corresponding author
# (joint) last author

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