Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2, Date: 2010/04/25 - 2010/04/25, Location: Vancouver Canada
Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Author:
Keywords:
Science & Technology, Physical Sciences, Technology, Electrochemistry, Engineering, Electrical & Electronic, Engineering, CARRIER LIFETIME DEPENDENCE, LEAKAGE CURRENT, ELECTRIC-FIELD, GERMANIUM, PERFORMANCE, SILICON, TEMPERATURE, PMOSFETS, EMISSION, MOSFETS, 4008 Electrical engineering, 4017 Mechanical engineering, 4018 Nanotechnology
Abstract:
This work investigates Trap-Assisted Tunneling (TAT) leakage in 80nm-deep Ge p+/n junctions used for short-channel pFET fabrication. The parameters in the available TAT models are adapted to obtain better agreement with the experimental results. It will be shown that one set of parameters can describe a wide range of counter-doping profiles, over the reverse voltage range between 0 and IV. Moreover, except for a reduction of the Shockley-Read-Hall lifetime, these parameters also give an accurate description for Ge epitaxial layers with increased threading dislocation density. Possible reasons are given for the strong voltage dependence of the junction leakage and the resulting low TAT-mass needed: the presence of threading dislocations may lead to enhanced tunneling, furthermore the validity of the original TAT models in these shallow junctions can be questioned. Further actions are suggested to get a better insight into the physical significance of the parameters. ©The Electrochemical Society.