Author:

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, Charge pumping (CP), dielectric reliability, negative-bias temperature instability (NBTI), sharp junctions, submelt laser anneal, CHARGE, FLASH, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

In this letter, submelt laser anneal used to achieve ultrashallow junctions (USJs) in capped high-κ devices with TaN/TiN metal gate electrode is investigated. The submelt laser anneal results in USJ and sharp junction on both n-and pMOSFET devices. However, this process induces interface and bulk defects and reduces negative-bias temperature instability (NBTI) reliability additionally. It is shown that if the laser anneal is followed by a rapid thermal anneal, the laser-related damage decreases, and the NBTI robustness improves without altering the obtained junction sharpness. © 2006 IEEE.