12th European Workshop on Materials for Advanced Metallization, Date: 2008/03/02 - 2008/03/05, Location: GERMANY, Dresden
Microelectronic Engineering
Author:
Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, Air gaps, Low-k, Sacrificial material, Capacitance reduction, CVD, Decomposition, 0204 Condensed Matter Physics, 0299 Other Physical Sciences, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 4016 Materials engineering
Abstract:
A sacrificial material deposited by CVD is used to demonstrate air gap formation in single damascene structures by UV-assisted decomposition. The material is removed through a porous low-k cap, after completion of the damascene scheme. The porosity of the low-k cap is shown to be critical for efficient air gap formation. Capacitance reduction of ∼50% is demonstrated using this technique compared to conventional SiOC(H) interconnects and an effective dielectric constant of 1.7 is extrapolated. © 2008 Elsevier B.V. All rights reserved.