Title: AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Authors: Cheng, Kai ×
Leys, Maarten
Degroote, Stefan
Derluyn, Joff
Sijmus, Bram
Favia, Paola
Richard, Olivier
Bender, Hugo
Germain, Marianne
Borghs, Gustaaf #
Issue Date: Mar-2008
Publisher: Institute of Pure and Applied
Series Title: Japanese Journal of Applied Physics vol:47 issue:3 pages:1553-1555
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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