Title: Capacitance-voltage characterization of GaAs-Al2O3 interfaces
Authors: Brammertz, Guy ×
Lin, Dennis
Martens, Koen
Mercier, David
Sioncke, Sonja
Delabie, Annelies
Wang, Wei-E
Caymax, Matty
Meuris, Marc
Heyns, Marc #
Issue Date: Nov-2008
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:93 issue:18 pages:183504-1-183504-3
Article number: 183504
Abstract: The authors apply the conductance method at 25 and 150 degrees C to GaAs-Al2O3 metal-oxide-semiconductor devices in order to derive the interface state distribution (D-it) as a function of energy in the bandgap. The D-it is governed by two large interface state peaks at midgap energies, in agreement with the unified defect model. S-passivation and forming gas annealing reduce the D-it in large parts of the bandgap, mainly close to the valence band, reducing noticeably the room temperature frequency dispersion. However the midgap interface state peaks are not affected by these treatments, such that Fermi level pinning at midgap energies remains.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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