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Title: Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
Authors: O'Sullivan, Barry ×
Aoulaiche, Marc
Cho, Moon Ju
Kauerauf, Thomas
Degraeve, Robin
Okawa, Hiroshi
Schram, Tom
Hoffmann, Thomas Y
Groeseneken, Guido
Biesemans, Serge
Nakabayashi, Takashi
Ikeda, Atsushi
Niwa, Masaaki #
Issue Date: Dec-2009
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:106 issue:11
Article number: 114504
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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