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Title: Effect of the presence of a deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe NPN HBT technology
Authors: Put, Sofie
Van Uffelen, Marco
Simoen, Eddy
Leroux, Paul
Claeys, Cor #
Issue Date: 19-Mar-2008
Conference: RADFAC Workshop location:Mol, Belgium date:19 March 2008
Publication status: published
KU Leuven publication type: IMa
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Associated Section of ESAT - INSYS, Integrated Systems
Technologiecluster ESAT Elektrotechnische Engineering
Electrical Engineering (ESAT) TC, Technology Campus Geel
# (joint) last author

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