Title: Lattice Location of RE Impurities in III-Nitrides
Authors: Vantomme, AndrĂ© ×
De Vries, Bart
Wahl, Ulrich #
Issue Date: 2010
Publisher: Springer-Verlag
Series Title: Topics in Applied Physics vol:124 pages:55-98
Host Document: Topics in Applied Physics
Abstract: This chapter focuses on the lattice site location of rare earth (RE) ions introduced into group III-nitrides either by ion implantation or doped in situ during growth by molecular beam epitaxy (MBE). The lattice site occupied will, to a large extent, govern the luminescence properties of the optically doped semiconductors. An overview of the various possible sites that exist in the wurtzite nitride lattice and of the techniques that can be used to accurately determine the occupied sites will be given. Particular attention will be devoted to channelling techniques, both ion beam channelling and electron emission channelling, which offer direct evidence of the lattice site without the need of further modelling.
ISSN: 0303-4216
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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