Title: Oxide field dependence of Si---SiO2 interface state generation and charge trapping during electron injection
Authors: Heyns, Marc ×
Krishna, Rao
De Keersmaecker, Roger #
Issue Date: Oct-1989
Publisher: New York
Series Title: Applied Surface Science vol:39 issue:1-4 pages:327-338
Abstract: The oxide field dependence of both the interface state generation and electron trapping during electron injection are studied using transistor structures. Two field thresholds are observed for the generation of interface states, at 1.5 and 4 MV/cm, respectively. The threshold at 4 MV/cm is also found for the generation of electron traps. The 1.5 MV/cm threshold is related to the change in energy loss mechanism of the injected electrons. The threshold at 4 MV/cm is suggested to originate from the injection of holes from the anode.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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