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Title: Electrical characterization of InGaAs ultra-shallow junctions
Authors: Petersen, Dirch H ×
Hansen, Ole
Boggild, Peter
Lin, Rong
Nielsen, Peter F
Lin, Dennis
Adelmann, Christoph
Alian, Alireza
Merckling, Clement
Penaud, Julien
Brammertz, Guy
Goossens, Jozefien
Vandervorst, Wilfried
Clarysse, Trudo #
Issue Date: Jan-2010
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:28 issue:1 pages:C1C41-C1C47
Abstract: In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n(++)/p(+) USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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