Title: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Authors: Mody, Jay ×
Duffy, Ray
Eyben, Pierre
Goossens, Jozefien
Moussa, Alain
Polspoel, Wouter
Berghmans, Bart
van Dal, M. J. H
Pawlak, B. J
Kaiser, M
Weemaes, R. G. R
Vandervorst, Wilfried #
Issue Date: Jan-2010
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:28 issue:1 pages:C1H5-C1H13
Abstract: With emerging three-dimensional device architectures for advanced silicon devices such as fin field-effect-transistors (FinFETs), new metrology challenges are faced to characterize dopants. The ratio of dopant concentration in the top surface and sidewalls of FinFETs may differ significantly, thereby influencing the performance of these devices. In this work, a methodology involving secondary ion mass spectrometry (SIMS) is presented to study the dose conformality in fins. However, SIMS is limited to probe the quantitative chemical dopant concentration (i.e., top/sidewall of fins). The fraction of the active dopant concentration determining the performance of FinFETs would still be unknown. Additionally, the concept based on SIMS is unable to provide information on the lateral junction depth. Thus, to obtain the unknown active dopant concentration and their spatial distribution, the authors extend their study by measuring the cross section of the fins with scanning spreading resistance microscopy and extracting the quantitative active carrier concentration in the fins.
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science