ITEM METADATA RECORD
Title: Solid phase epitaxial growth of Dy-germanide films on Ge(0 0 1) substrates
Authors: Bhuiyan, Kabir ×
Menghini, Mariela Andrea
Seo, Jin Won
Locquet, Jean-Pierre #
Issue Date: Apr-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:8 pages:423-426
Abstract: Dy thin films are grown on Ge(0 0 1) substrates by molecular beam deposition at room temperature. Subsequently, the Dy film is annealed at different temperatures for the growth of a Dy-germanide film. Structural, morphological and electrical properties of the Dy-germanide film are investigated by in situ reflection high-energy electron diffraction, and ex situ X-ray diffraction, atomic force microscopy and resistivity measurements. Reflection high-energy electron diffraction patterns and X-ray diffraction spectra show that the room temperature growth of the Dy film is disordered and there is a transition at a temperature of 300–330 °C from a disordered to an epitaxial growth of a Dy-germanide film by solid phase epitaxy. The high quality Dy3Ge5 film crystalline structure is formed and identified as an orthorhombic phase with smooth surface in the annealing temperature range of 330–550 °C. But at a temperature of 600 °C, the smooth surface of the Dy3Ge5 film changes to a rough surface with a lot of pits due to the reactions further.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
pub05668.pdfMain article Published 972KbAdobe PDFView/Open Request a copy
Kabir ME2011 Dy Germanide.pdfArticle Published 972KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science