Title: Electrical characterization of rare-earth implanted GaN
Authors: van Rensburg, P. J. Janse ×
Auret, F. D
Matias, V. S
Vantomme, André #
Issue Date: Dec-2009
Publisher: North-Holland
Series Title: Physica B, Condensed Matter vol:404 issue:22 pages:4411-4414
Conference: 3rd South African Conference on Photonic Materials Waterberg, SOUTH AFRICA, MAR 23-27, 2009
Abstract: Deep-level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of MOCVD grown, europium- (Eu) and xenon- (Xe) implanted GaN films on sapphire substrates. Implantation energy was 80 keV with a fluence of 1 x 10(14) cm(-2) along a channeled crystallographic direction. Defect levels were observed at E-C-0.19 eV for both Eu- and Xe-implantation which were predicted to be a rare-earth related donor level by theoretical calculations. Other defect levels are observed with energy levels located at 0.22, 0.68, 0.49, 0.60, 0.77 eV and 0.48, 0.64, 0.45, 0.72 eV below the conduction band for Eu and Xe implantation, respectively. Some of these levels have similar defect signatures and can be related to other implantation related defects introduced in erbium, praseodymium and helium implantations. (C) 2009 Elsevier B.V. All rights reserved.
ISSN: 0921-4526
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science