Title: Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
Authors: van Dreumel, G. W. G ×
Bohnen, T
Buijnsters, Josephus Gerardus
van Enckevort, W. J. P
ter Meulen, J. J
Hageman, P. R
Vlieg, E #
Issue Date: May-2010
Publisher: Elsevier Science
Series Title: Diamond and Related Materials: International Journal on the Science and Technology of Diamond and Related Materials vol:19 issue:5-6 pages:437-440
Abstract: In this study, {0001} oriented GaN crystals have been grown on freestanding, polycrystalline diamond substrates using AlN and GaN nucleation layers (NLs). XRD measurements and SEM analysis showed that the application of a thin AlN NL gives the best structural results, because AlN has a thermal expansion coefficient in between GaN and diamond and thus delocalizes the stress to two interfaces. The optical quality of the layers, investigated with Raman microscopy and photoluminescence spectroscopy, is similar. Although no lateral epitaxy is obtained, new insight is gained on the nucleation of GaN on diamond substrates facilitating the growth of GaN epilayers on polycrystalline diamond substrates. (C) 2009 Elsevier B.V. All rights reserved.
ISSN: 0925-9635
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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