Title: High quality epitaxial Dy3Ge5 films grown on Ge(001) substrates
Authors: Bhuiyan, Kabir ×
Menghini, Mariela Andrea
Locquet, Jean-Pierre
Seo, Jin Won
Marchiori, Chiara #
Issue Date: 14-Jan-2011
Publisher: Published for the Society by the American Institute of Physics
Series Title: Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:1 pages:1-4
Conference: Workshop on Dielectrics in Microelectronics edition:16 location:Bratislava, Slovakia date:28-30 June 2010
Article number: 01A805
Abstract: Dy thin films are grown on Ge(001) substrates by molecular beam deposition at room temperature. Subsequently, the Dy films are annealed at a high temperature of 550 °C for the growth of Dy3Ge5 films. Structural, morphological, and electrical properties of the Dy3Ge5 films are investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction, atomic force microscopy, and resistivity measurements. Reflection high-energy electron diffraction patterns and x-ray diffraction spectra show that the Dy3Ge3 film crystalline structure is formed and identified as an orthorhombic phase with smooth surface and with pits when annealing at a temperature of 500 °C. A smooth surface of the epitaxial Dy3Ge3 film can be achieved with a reduced pit formation using a step-growth process.
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

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