Published for the Society by the American Institute of Physics
Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:1 pages:1-4
Workshop on Dielectrics in Microelectronics edition:16 location:Bratislava, Slovakia date:28-30 June 2010
Dy thin films are grown on Ge(001) substrates by molecular beam deposition at room temperature. Subsequently, the Dy films are annealed at a high temperature of 550 °C for the growth of Dy3Ge5 films. Structural, morphological, and electrical properties of the Dy3Ge5 films are investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction, atomic force microscopy, and resistivity measurements. Reflection high-energy electron diffraction patterns and x-ray diffraction spectra show that the Dy3Ge3 film crystalline structure is formed and identified as an orthorhombic phase with smooth surface and with pits when annealing at a temperature of 500 °C. A smooth surface of the epitaxial Dy3Ge3 film can be achieved with a reduced pit formation using a step-growth process.