Published for the Society by the American Institute of Physics
Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures vol:29 issue:1 pages:1-4
Workshop on Dielectrics in Microelectronics edition:16 location:Bratislava, Slovakia date:28-30 June 2010
Epitaxial Dy2O3 thin films are grown on SrTiO3(001) substrates by molecular beam epitaxy. Structural, morphological, and interfacial properties of the Dy2O3 film are investigated by in situ reflection high-energy electron diffraction (RHEED), ex situ x-ray diffraction (XRD), atomic force microscopy, and cross-sectional transmission electron microscopy (TEM). RHEED patterns and XRD spectra show that the Dy2O3 film is grown epitaxially in a cubic phase with a (001) orientation. The surface of the film is smooth with a rms roughness of 4 Å. The TEM image shows that the Dy2O3 film is crystalline with an abrupt interface between the film and substrate without any indication of a chemical reaction or interdiffusion occurring at the interface.