Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, HIGH-K, GAAS, GERMANIUM, CHANNEL, MOSFET, DEPOSITION, LAYER, ZRO2, TRANSCONDUCTANCE, SUBSTRATE, 0303 Macromolecular and Materials Chemistry, 0912 Materials Engineering, 0913 Mechanical Engineering, Applied Physics, 4016 Materials engineering, 4018 Nanotechnology

Abstract:

The need for high-κ gate dielectrics and metal gates in advanced integrated circuits has reopened the door to Ge and III-V compounds as potential replacements for silicon channels, offering the possibility to further increase the performances of complementary metal oxide semiconductor (CMOS) circuits, as well as adding new functionalities. Yet, a fundamental issue related to high-mobility channels in CMOS circuits is the electrical passivation of their interfaces (i.e., achieving a low density of interface defects) approaching state-of-the-art Si-based devices. Here we discuss promising approaches for the passivation of Ge and III-V compounds and highlight insights obtained by combining experimental characterization techniques with first-principles simulations.