Journal of the electrochemical society vol:156 issue:8 pages:G103-G108
Thin HfO2 films grown on the lightly oxidized surface of Si(100) wafers have been examined using dark-field transmission electron microscopy and selected area electron diffraction in plan view. The polycrystalline film has a grain size of the order of 100 nm, and many of the grains show evidence of twinning on (110) and (001) planes. Diffraction studies showed that the film had a strong  out-of-plane texture and that a tiny volume fraction of a metastable (possibly tetragonal) phase was retained. The reasons for the texture, the twinning, and the retention of the metastable phase are discussed.