Title: An assessment of the mobility degradation induced by remote charge scattering
Authors: Ji, Z ×
Zhang, J. F
Zhang, W
Groeseneken, Guido
Pantisano, Luigi
De Gendt, Stefan
Heyns, Marc #
Issue Date: Dec-2009
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:95 issue:26
Article number: 263502
Abstract: Carrier mobility reduces when the gate SiON becomes thinner than 2 nm or high-k layer is used. Agreement has not yet been reached on the level of reduction and on the underlying mechanism. Remote charge scattering has been proposed to be responsible for the mobility reduction and this work assesses its importance. By increasing charge density at 0.56-1 nm from the substrate interface to the order of 10(20) cm(-3), it is found that both electron and hole mobility changes little.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
ESAT - MICAS, Microelectronics and Sensors
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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