Title: Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Authors: Fedorenko, Y ×
Swerts, J
Maes, J. W
Tois, E
Haukka, S
Wang, C. -G
Wilk, G
Delabie, Annelies
Deweerd, W
De Gendt, Stefan #
Issue Date: 2007
Publisher: Electrochemical soc inc
Series Title: Electrochemical and solid state letters vol:10 issue:5 pages:H149-H152
Abstract: Atomic layer deposition of Hf-Si-O and HfO2 using HfCl4, SiCl4, and H2O was studied. The growth per cycle and composition of Hf-Si-O films were analyzed as a function of the growth temperature, the pulse sequence, and the precursor doses. The growth of Hf-Si-O from HfCl4/SiCl4/H2O appeared to be determined not only by the -OH density but also by the -OH bonding mode. The HfCl4/SiCl4/H2O chemistry results in carbon-free films with low chlorine impurity content. The Hf-Si-O films of Hf-rich composition are meeting the leakage-current requirements for 45 nm technology node and below. (c) 2007 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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