Title: Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation
Authors: MacKenzie, M ×
Craven, A. J
McComb, D. W
De Gendt, Stefan
Docherty, F. T
McGilvery, C. M
McFadzean, S #
Issue Date: 2007
Publisher: Electrochemical soc inc
Series Title: Electrochemical and solid state letters vol:10 issue:6 pages:G33-G35
Abstract: Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack. (c) 2007 The Electrochemical Society.
ISSN: 1099-0062
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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