Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation
MacKenzie, M × Craven, A. J McComb, D. W De Gendt, Stefan Docherty, F. T McGilvery, C. M McFadzean, S #
Electrochemical soc inc
Electrochemical and solid state letters vol:10 issue:6 pages:G33-G35
Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack. (c) 2007 The Electrochemical Society.