Title: Nanoscale imaging and X-ray spectroscopy of electrically active defects in ultra thin dielectrics on silicon
Authors: Bernardini, S ×
Ishii, M
Whittaker, E
Hamilton, B
Freeland, J. W
Poolton, N. R. J
De Gendt, Stefan #
Issue Date: Sep-2007
Publisher: Elsevier science bv
Series Title: Microelectronic engineering vol:84 issue:9-10 pages:2286-2289
Abstract: This work concerns deeply bound charge centers in ultra thin high-k films. Non-contact Atomic Force Microscopy was used to simultaneously image topology and electric force data arising from unscreened fixed charges. These charges were produced using synchrotron radiation to pump Si L and K shell transitions. Defect charging then results from electron transfer between a defect state and a core hole state. We were able to demonstrate the local detection of x-ray absorption spectra using the probe tip. This enabled us to establish a possible link between film morphology, electronic defects and local stoichiometry in ultra thin high-k films on the nm scale.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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