Title: Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
Authors: Schram, Tom ×
Witters, Thomas
Tseng, Joshua
De Gendt, Stefan
De Meyer, Kristin #
Issue Date: Nov-2010
Publisher: Elsevier science bv
Series Title: Microelectronic engineering vol:87 issue:9 pages:1805-1807
Abstract: In this study, we used oxygen to increase the work function of a TIN gated stack. To prevent the EOT growth associated with oxygen incorporation, we proposed a novel replacement gate flow, where oxygen incorporation by O-2 anneal on a thin TiN layer was performed after dopant activation. With this novel flow, a maximum work function tuning range of similar to 0.32 eV was achieved without significant EOT penalty, making it attractive for p-type metal gate integration. (C) 2009 Published by Elsevier B.V.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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