Title: Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode
Authors: Nourbakhsh, Amirhasan ×
Cantoro, Mirco
Hadipour, Afshin
Vosch, Tom
van der Veen, Marleen H
Heyns, Marc
Sels, Bert
De Gendt, Stefan #
Issue Date: Oct-2010
Publisher: Amer inst physics
Series Title: Applied physics letters vol:97 issue:16 pages:163101/1-163101/3
Article number: 163101
Abstract: In this paper, we report the fabrication and characterization of Schottky rectifying junctions between semiconducting, modified single-layer graphene and a metal. The pristine, semimetallic behavior of graphene is altered by controlled exposure to an oxygen plasma, resulting in the opening of an optical band gap as shown by photoluminescence spectroscopy. The occurrence of a Schottky barrier between semiconducting graphene and metals with different work functions (Al, Cr, Pd, and Yb) is investigated by electrically characterizing the as-fabricated junctions. The rectifying properties of our Schottky diodes show the potential of semiconducting, modified graphene as building block of elementary logic circuits. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3495777]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Molecular Imaging and Photonics
Semiconductor Physics Section
Department of Materials Engineering - miscellaneous
Centre for Surface Chemistry and Catalysis
× corresponding author
# (joint) last author

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