A technique is proposed to grow horizontal carbon nanotubes (CNTs) bridging metal electrodes and to assess their electrical properties. A test structure was utilized that allows for selective electrochemical sidewall catalyst placement. The selectivity of the technique is based on the connection of the desired metal electrodes to the silicon substrate where the potential for electrochemical deposition was applied. Control over the Ni catalyst size (15-30 nm) and density (up to 3 x 10(11) particles cm(-2)) is demonstrated. Horizontal CNTs with controlled diameter and density were obtained by CVD growth perpendicular to the sidewalls of patterned TiN electrode structures. Electrode gaps with spacings from 200 nm up to 5 mu m could be bridged by both direct CNT-electrode contact and CNT-CNT entanglement. The TiN-CNT-TiN and TiN-CNT-CNT-TiN bridges were electrically characterized without any further post-growth contacting. Resistance values as low as 40 Omega were measured for the smallest gap spacing and depended mainly on the number and configuration of the CNT bridges. The proposed method could be implemented for CNT-based horizontal interconnections and be a route to make different nanoelectronic devices such as chemical and electromechanical sensors.