ITEM METADATA RECORD
Title: Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
Authors: Lin, Dennis ×
Wang, Wei-E
Brammertz, Guy
Meuris, Marc
Heyns, Marc #
Issue Date: Jul-2009
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:86 issue:7-9 pages:1554-1557
Abstract: In this paper we compare the interface trap distributions D-it(E) of sulfur treated Al2O3/In0.53Ga0.47As interfaces, which underwent MOS capacitor and transistor fabrication processes. Lower interface trap densities were found close to the conduction band edge for both cases. The inversion channel MOSFET achieves high device performance despite the fact that its oxide-semiconductor interface quality is a notch below that of the MOS capacitor with optimized process. (C) 2009 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
pub06698.pdfMain article Published 640KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science