Title: The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
Authors: Lin, Dennis ×
Brammertz, Guy
Martens, Koen
de Valicourt, Guilhem
Negre, Laurent
Wang, Wei-E
Tsai, Wilman
Meuris, Marc
Heyns, Marc #
Issue Date: Apr-2009
Publisher: American Institute of Physics
Series Title: Applied physics letters vol:94 issue:15 pages:153508-1-153508-3
Article number: 153508
Abstract: An interface characterization technique, termed the Fermi-level efficiency (FLE) method, is proposed for evaluating the passivation level of high trap density oxide-semiconductor interfaces. Based on the characteristic charge trapping time-energy relation and the conductance method, the FLE method examines the Fermi-level displacement at the oxide-semiconductor interface under applied gate bias. The obtained Fermi-level efficiencies can be used to assess the interface qualities of metal-oxide-semiconductor devices with III-V and other novel substrate materials.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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