ITEM METADATA RECORD
Title: Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
Authors: Chang, Y. C ×
Merckling, C
Penaud, J
Wang, W. -E
Dekoster, J
Meuris, M
Caymax, M
Heyns, Marc
Kwo, J
Hong, M #
Issue Date: Sep-2010
Publisher: Amer inst physics
Series Title: Applied physics letters vol:97 issue:11 pages:-
Abstract: To effectively passivate the technologically important GaAs (001) surfaces, in situ deposition of Al2O3 was carried out with molecular beam epitaxy. The impacts of initial GaAs surface reconstruction and post-deposition annealing have been systematically investigated. The corresponding interfacial state density (D-it) were derived by applying the conductance method at 25 and 150 degrees C on both p-type and n-type GaAs metal-oxide-semiconductor capacitors to establish the D-it spectra in proximity of the critical midgap region. We show that significant reduction of D-it near the midgap is achieved by applying an optimized thermal annealing on samples grown on a Ga-rich (4x6) reconstructed surface. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488813]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science