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Title: Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric application
Authors: Hardy, A ×
Van Elshocht, S
Adelmann, C
Conard, T
Franquet, A
Douheret, O
Haeldermans, I
D'Haen, J
De Gendt, Stefan
Caymax, M
Heyns, Marc
D'Olieslaeger, M
Van Bael, M. K
Mullens, J #
Issue Date: Oct-2008
Publisher: Elsevier science sa
Series Title: Thin solid films vol:516 issue:23 pages:8343-8351
Abstract: Zirconia ultrathin films were deposited by aqueous chemical solution deposition, using citratoperoxo-Zr(IV) precursors with different citric acid content. The precursor synthesis, thermal decomposition and crystallization of oxide powders were studied. This showed an effect of the citric acid content in every stage. The precursors were applied for the deposition of uniform, ultrathin films (<30 nm thickness) as well. Tetragonal ZrO2 crystallized starting from 500 degrees C for thin films with a thickness of 10 nm. This was independent of the citric acid content in the precursor. The topography after annealing at 600 degrees C was also similar. However, annealing at higher temperatures led to coarser grain size. The dielectric constant was high (similar to 21-22) and comparable to ZrO2 deposited by atomic layer deposition. (C) 2008 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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