IEEE Electron Device Letters vol:31 issue:5 pages:402-404
In Germanium-based metal-oxide-semiconductor field-effect transistors, a high-quality interfacial layer prior to high-kappa deposition is required to achieve low interface state densities and prevent Fermi level pinning. In this letter, the physical and electrical properties of a Ge/GeO2/Al2O3 gate stack are investigated. The GeO2 interlayer grown by radical oxidation and the formation of a germanate (GeAlOX) layer at the interface provide a stable high-quality passivation of the Ge channel. High carrier mobilities (235 cm(2)/V.s for electrons and 265 cm(2)/V.s for holes) are demonstrated for a relatively low 3.7-nm equivalent oxide thickness (EOT), enabling the realization of a high-performance CMOS technology with potential EOT scaling.