Title: High FET performance for a future CMOS GeO2-based technology
Authors: Bellenger, Florence ×
De Jaeger, Brice
Merckling, Clement
Houssa, Michel
Penaud, Julien
Nyns, Laura
Vrancken, Evi
Caymax, Matty
Meuris, Marc
Hoffmann, Thomas
De Meyer, Kristin
Heyns, Marc #
Issue Date: May-2010
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:31 issue:5 pages:402-404
Abstract: In Germanium-based metal-oxide-semiconductor field-effect transistors, a high-quality interfacial layer prior to high-kappa deposition is required to achieve low interface state densities and prevent Fermi level pinning. In this letter, the physical and electrical properties of a Ge/GeO2/Al2O3 gate stack are investigated. The GeO2 interlayer grown by radical oxidation and the formation of a germanate (GeAlOX) layer at the interface provide a stable high-quality passivation of the Ge channel. High carrier mobilities (235 cm(2)/V.s for electrons and 265 cm(2)/V.s for holes) are demonstrated for a relatively low 3.7-nm equivalent oxide thickness (EOT), enabling the realization of a high-performance CMOS technology with potential EOT scaling.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
× corresponding author
# (joint) last author

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