ITEM METADATA RECORD
Title: GaAs on Ge for CMOS
Authors: Brammertz, G ×
Caymax, M
Meuris, M
Heyns, Marc
Mols, Y
Degroote, S
Leys, M #
Issue Date: Nov-2008
Publisher: Elsevier science sa
Series Title: Thin solid films vol:517 issue:1 pages:148-151
Abstract: Selective epitaxial growth of GaAs on Ge is a prerequisite for the integration of GaAs and Ge in the sub-22 nm CMOS nodes. The problems encountered for epitaxial growth of GaAs on Ge are described and illustrated. Mainly the problem of anti-phase boundary (APB) formation is addressed. Selective epitaxial growth of GaAs on Ge with a SiO2 mask is discussed and selectively grown layers are characterized by X-ray diffraction, electron microscopy, defect etching and photoluminescence spectroscopy. An optimized growth procedure is presented, which simultaneously reduces loading effects and APB creation. Low temperature photoluminescence measurements show the good quality of the selectively grown GaAs on Ge. (C) 2008 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
pub06703.pdfMain article Published 433KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science