Title: Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Authors: Zhang, Yang ×
Fischetti, M. V
Soree, B
Magnus, W
Heyns, Marc
Meuris, M #
Issue Date: Oct-2009
Publisher: Amer inst physics
Series Title: Journal of applied physics vol:106 issue:8 pages:083704-1-083704-9
Abstract: We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k.p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent method-making use of a nonuniform spatial mesh and of the Broyden second method-to solve the coupled envelope-wave function k.p and Poisson equations. The hole mobility is computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high-kappa insulator, to Coulomb scattering interface traps or oxide charges-ignored in our calculations-and to different channel structures employed. (C) 2009 American Institute of Physics. [doi:10.1063/1.3245327]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Process Engineering for Sustainable Systems Section
× corresponding author
# (joint) last author

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