Title: Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance
Authors: Nguyen, Ahn Phuc Duc ×
Stesmans, Andre
Afanas'ev, Valeri
Lieten, Ruben
Borghs, Gustaaf #
Issue Date: Feb-2010
Publisher: Elsevier Sequoia
Series Title: Thin Solid Films vol:518 issue:9 pages:2361-2364
Abstract: A multifrequency electron spin resonance (ESR) study of Ge3N4/(111)Ge entities with rim thick epitaxial Ge3N4 layers. of subcritical thickness for mismatch relaxation, grown in a nitrogen plasma reveals the presence of an anisotropic paramagnetic interface center of trigonal symmetry. Building on the analysis of its specific ESR properties. including magnetic field angular mapping data and in the light or previous light the signal is tentatively ascribed to the interfacial Ge-center dot N-3 center The defect occurrence is discussed within the specific interface matching, without misfit dislocations As an interfacial Ge dangling bond defect. it may operate as an inherent electrically detrimental trap. (C) 2009 Elsevier B.V. All rights reserved
ISSN: 0040-6090
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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