Title: Can silicon behave like graphene? A first-principles study
Authors: Houssa, Michel ×
Pourtois, Geoffrey
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Sep-2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:97 issue:11
Article number: 112106
Abstract: The electronic properties of two-dimensional hexagonal silicon (silicene) are investigated using first-principles simulations. Though silicene is predicted to be a gapless semiconductor, due to the sp(2)-hybridization of its atomic orbitals, the weak overlapping between 3p(z) orbitals of neighbor Si atoms leads to a very reactive surface, resulting in a more energetically stable semiconducting surface upon the adsorption of foreign chemical species. It is predicted that silicene inserted into a graphitelike lattice, like ultrathin AlN stacks, preserves its sp(2)-hydridization, and hence its graphenelike electronic properties. (c) 2010 American Institute of Physics. [doi:10.1063/1.3489937]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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