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Title: Bias voltage dependent shift of the atomic-scale structure of a Ge(111)-(2 x 1) reconstructed surface measured by low temperature scanning tunneling microscopy
Authors: Arseyev, P. I ×
Maslova, N. S
Panov, V. I
Savinov, S. V
Van Haesendonck, Christian #
Issue Date: Mar-2007
Publisher: American Institute of Physics
Series Title: JETP Letters vol:85 issue:6 pages:277-282
Abstract: The results of low temperature scanning tunneling microscopy (STM) investigations of a clean Ge(111) surface are presented. Bias dependent shifts of the atomic-scale structure caused by the (2 x 1) reconstruction of the Ge(111) surface are observed. A detailed comparison of experimental data with theoretical predictions based on the pi-bonded chain model indicates that inelastic tip-sample interaction plays a significant role in STM imaging of the Ge(111)-(2 x 1) reconstructed surface.
ISSN: 0021-3640
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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