Title: Electron energy band alignment at the NiO/SiO2 interface
Authors: Afanas'ev, Valeri ×
Badylevich, Mikhail
Houssa, Michel
Stesmans, Andre
Aggrawal, Gagan
Campbell, S. A #
Issue Date: Apr-2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:96 issue:17 pages:1-3
Article number: 172105
Abstract: Study of the NiO/SiO2 interface band diagram using optical absorption, photoconductivity, and internal photoemission measurements reveals that deposited Ni oxides have a band gap of 3.2 +/- 0.1 eV, with the top of the valence band at 5.3 +/- 0.1 eV below the conduction band of SiO2 and showing no measurable sensitivity to the oxygen surplus in the layer up to 20%. Annealing in a reducing ambient (forming gas) at 400 degrees C results in narrowing of the band gap and an up shift in the occupied electron state edge by approximate to 1 eV, which is tentatively associated with partial reduction in the NiO layer.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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