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Title: Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
Authors: Pawlak, Malgorzata ×
Kaczer, Ben
Kim, Min-Soo
Popovici, Mihaela Ioana
Tomida, Kazuyuki
Swerts, Jan
Opsomer, Karl
Polspoel, Wouter
Favia, Paola
Vrancken, Christa
Demeurisse, Caroline
Wang, W. -C
Afanas'ev, Valeri
Vandervorst, Wilfried
Bender, Hugo
Debusschere, Ingrid
Altimime, Laith
Kittl, Jorge #
Issue Date: Oct-2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:97 issue:16
Article number: 162906
Abstract: Metastable perovskite SrxTiyOz (STO) films were formed over a wide composition range by crystallization of layers grown by atomic layer deposition. An expansion of the lattice, decrease in permittivity and mild increase in band gap are observed with increasing Sr content. Sr-rich films [Sr/(Sr+Ti) similar to 62 at. %] show significant improvement in leakage current at low equivalent oxide thicknesses (EOT) as compared to stoichiometric films (Sr/(Sr+Ti) similar to 50 at. %). TiN/STO/TiN capacitors with leakage similar to 10(-6) A/cm(2) at 1 V were obtained at 0.6 nm EOT for crystalline Sr-rich STO. The difference in leakage behavior was found to correlate with different microstructures developed during crystallization. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3505323]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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