Title: Electron energy band alignment at the (100)Si/MgO interface
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Cherkaoui, K
Hurley, P. K #
Issue Date: Feb-2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:96 issue:5 pages:1-3
Article number: 052103
Abstract: The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally assumed bulk crystal value (7.83 eV). The annealing-induced crystallization of MgO mostly affects the energy of the valence band while the conduction band bottom retains its energy position at 3.37 +/- 0.05 eV above the top of the silicon valence band.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science