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Title: XPS and depth resolved SXES study of HfO2/Si interlayers
Authors: Filatova, E. O ×
Sokolov, A. A
Ovchinnikov, A. A
Tveryanovich, S. Yu
Savinov, E. P
Marchenko, D. E
Afanas'ev, Valeri
Shulakov, A. S #
Issue Date: Aug-2010
Publisher: Elsevier Scientific Pub. Co.
Series Title: Journal of Electron Spectroscopy and Related Phenomena vol:181 issue:2-3 pages:206-210
Abstract: Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar+ ion sputtering were compared to the results obtained by a non-destructive X-ray emission spectroscopy with depth resolution (DRSXES). It was found that the atomic layer deposition of hafnia results in a thinner Si oxide interlayer than the metallo-organic chemical vapour deposition. By DRSXES thickness of this interlayer was found to be 1.5 +/- 0.1 nm. (C) 2010 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0368-2048
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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