XPS and depth resolved SXES study of HfO2/Si interlayers
Filatova, E. O × Sokolov, A. A Ovchinnikov, A. A Tveryanovich, S. Yu Savinov, E. P Marchenko, D. E Afanas'ev, Valeri Shulakov, A. S #
Elsevier Scientific Pub. Co.
Journal of Electron Spectroscopy and Related Phenomena vol:181 issue:2-3 pages:206-210
Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar+ ion sputtering were compared to the results obtained by a non-destructive X-ray emission spectroscopy with depth resolution (DRSXES). It was found that the atomic layer deposition of hafnia results in a thinner Si oxide interlayer than the metallo-organic chemical vapour deposition. By DRSXES thickness of this interlayer was found to be 1.5 +/- 0.1 nm. (C) 2010 Elsevier B.V. All rights reserved.