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Title: Selective area growth of high quality InP on Si (001) substrates
Authors: Wang, Gang ×
Leys, Maarten
Loo, Roger
Richard, Olivier
Bender, Hugo
Waldron, Niamh
Brammertz, Guy
Dekoster, Johan
Wang, Wei-E
Seefeldt, Marc
Caymax, Matty
Heyns, Marc #
Issue Date: Sep-2010
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:97 issue:12 pages:1-3
Article number: 121913
Abstract: In this work, we demonstrate the selective area growth of high quality InP layers in submicron trenches on exactly 001 oriented Si substrates by using a thin Ge buffer layer. Antiphase domain boundaries were avoided by annealing at the Ge surface roughening temperature to create additional atomic steps on the Ge buffer layer. The mechanism of Ge surface atomic step formation and the corresponding step density control method are illustrated. The elimination of antiphase boundaries from the optimized Ge buffer layer, together with the defect necking effect, yield defect-free top InP layers inside the trenches.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Mechanical Metallurgy Section (-)
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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