Journal of Electronic Materials vol:39 issue:9 pages:1920-1925
28th International Conference on Thermoelectrics/7th European Conference on Thermoelectrics location:Freiburg, Germany date:26-30 July 2009
This article reports on the development of thin films of p- and n-type bismuth telluride compounds which are suitable for microelectromechanical systems (MEMS) thermoelectric energy harvesters. Films were prepared by the pulsed laser deposition technique. It is shown that the thin films of binary Bi-Te alloys outperformed considerably their ternary counterparts. Furthermore, the highest thermoelectric figure of merit (ZT) was found to be 0.39 for the p-type Bi32Te68 alloy, whereas the optimal n-type alloy was Bi25Te75, which was characterized by a relatively low stress gradient.