Title: Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
Authors: Marchiori, C
Kiewra, E
Fompeyrine, J
Gerl, C
Rossel, C
Richter, M
Locquet, Jean-Pierre ×
Smets, Tomas
Sousa, M
Andersson, C
Webb, D. J #
Issue Date: May-2010
Publisher: Amer inst physics
Series Title: Applied physics letters vol:96 issue:21 pages:1-3
Article number: 212901
Abstract: Metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with amorphous Al2O3 and HfO2/SiOx-Si gate stacks, grown by molecular beam deposition. As and In oxides were observed at the Al2O3/In0.17Ga0.83As interface, whereas no oxides were detected on the Si-passivated In0.17Ga0.83As surface after HfO2 deposition. Traces of As were found in both gate stacks. Si-passivated MOSFETs, with a drain current of 2.8 x 10(3) mu A/mm at V-g-V-t=2.0 V, V-d = 1.0 V, I-on/I-off=1 x 10(7), and inverse subthreshold slope of 98-120 mV/decade, show superior performance with respect to devices without Si interlayer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430572]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science