Title: Photoluminescence from localized states in disordered indium nitride
Authors: Bansal, Bhavtosh ×
Kadir, Abdul
Bhattacharya, Arnab
Moshchalkov, Victor #
Issue Date: Jul-2008
Publisher: Amer inst physics
Series Title: Applied physics letters vol:93 issue:2 pages:1-3
Article number: 021113
Abstract: Photoluminescence spectra from disordered InN were studied in very high magnetic fields. The samples had Gaussian spectra with low temperature emission peaks at 0.82 and 0.98 eV, respectively. The average spatial extent of the excitonic wave functions, inferred from the diamagnetic shift, is only 2-3 nm. This shows that the recombination is from an ensemble of highly localized states within a landscape of a smooth (classical) disorder potential of strength of the order of 10 meV. The anomalies in the temperature dependence of the photoluminescence peak and linewidth give further support to the picture of trapped photoexcited carriers. (C) 2008 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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