Title: Lattice location study of ion implanted Sn and Sn-related defects in Ge
Authors: Decoster, Stefan ×
Cottenier, Stefaan
Wahl, Ulrich
Correia, J. G
Vantomme, André #
Issue Date: Apr-2010
Publisher: Amer physical soc
Series Title: Physical review b vol:81 issue:15 pages:1-6
Article number: 155204
Abstract: In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments, we determined the exact lattice location of ion implanted Sn-121 atoms and compared the results to predictions from density-functional calculations. The majority of the Sn atoms are positioned on the substitutional site, as can be expected for an isovalent impurity, while a second significant fraction occupies the sixfold coordinated bond-centered site, which is stable up to at least 400 degrees C. Corroborated by ab initio calculations, we attribute this fraction of bond-centered Sn atoms to the Sn-vacancy defect complex in the split-vacancy configuration. Furthermore, we are able to assign specific defect complex geometries to resonances from earlier Mossbauer spectroscopy studies of Sn in Ge.
ISSN: 1098-0121
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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