Oxide-based Materials and Devices location:San Francisco, CA, USA date:24-27 January 2010
The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive As-73 and Sb-124 isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate the difficulty in introducing oversized group V impurities on O sites and thus put further into question whether these elements may act as simple chemical dopants in ZnO. (C) 2009 Elsevier B.V. All rights reserved.