Identification of the prime optical center in GaN:Eu3+
Roqan, I. S × O'Donnell, K. P Martin, R. W Edwards, P. R Song, S. F Vantomme, André Lorenz, K Alves, E Bockowski, M #
Amer physical soc
Physical review b vol:81 issue:8 pages:1-5
We identify a dominant light-emitting center in ion-implanted GaN: Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional Eu-Ga defect. It lacks a "subgap" excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its F-7(2) level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.