Title: Interface analysis of HfO2 films on (100)Si using x-ray photoelectron spectroscopy
Authors: Sokolov, A. A ×
Filatova, E. O
Afanas'ev, Valeri
Taracheva, E. Yu
Brzhezinskaya, M. M
Ovchinnikov, A. A #
Issue Date: Feb-2009
Publisher: Iop publishing ltd
Series Title: Journal of physics d-applied physics vol:42 issue:3 pages:1-6
Article number: 035308
Abstract: Thin layers of HfO2 grown on the (1 0 0) Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition.
ISSN: 0022-3727
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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