Interface analysis of HfO2 films on (100)Si using x-ray photoelectron spectroscopy
Sokolov, A. A × Filatova, E. O Afanas'ev, Valeri Taracheva, E. Yu Brzhezinskaya, M. M Ovchinnikov, A. A #
Iop publishing ltd
Journal of physics d-applied physics vol:42 issue:3 pages:1-6
Thin layers of HfO2 grown on the (1 0 0) Si crystal surface using atomic layer deposition or metallo-organic chemical vapour deposition were analysed using x-ray photoelectron spectroscopy (XPS) of Hf 4f, Si 2p and O 1s electron states. The chemical indepth profiling was conducted by combining XPS with Ar+ ion sputtering. In addition to establishing the deposition-sensitive oxide structure, Ar+ ion sputtering was found to lead to the formation of a metallic Hf layer on the surface of the sample. The latter observation suggests HfO2 as a feasible candidate for not only insulating applications but, thanks to the high mass and electron density of the cation, also as a material suitable for the fabrication of nanometre-sized conductors by direct oxide decomposition.