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Title: Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium
Authors: Simoen, Eddy ×
Brugere, Antoine
Satta, Alessandra
Firrincieli, Andrea
Van Daele, Benny
Brijs, Bert
Richard, Olivier
Geypen, Jef
Meuris, Marc
Vandervorst, Wilfried #
Issue Date: May-2009
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:105 issue:9 pages:1-3
Article number: 093538
Abstract: The impact of the phosphorus concentration [P] on the solid-phase epitaxial regrowth rate of preamorphized p-type germanium has been studied by a combination of Rutherford backscattering, secondary ion mass spectrometry, and transmission electron microscopy. It will be shown that for P concentrations in the 10(18) -5 x 10(19) cm(-3) range, the regrowth rate is significantly enhanced compared with undoped germanium, while the opposite holds for [P] above about 4-5 x 10(20) cm(-3). This regrowth retardation is shown associated with segregation across the crystalline/amorphous boundary and snow plow of P in excess of the metastable solid solubility in the recrystallized material. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3125459]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Structural Mechanics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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