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Title: Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy
Authors: Polspoel, Wouter
Favia, Paola
Mody, Jay
Bender, Hugo
Vandervorst, Wilfried #
Issue Date: Jul-2009
Publisher: American Institute of Physics
Series Title: Journal of applied physics vol:106 issue:2 pages:1-7
Article number: 024101
Abstract: Local electrical stress in gate dielectrics using conductive atomic force microscopy (C-AFM) induces structural damage in these layers. To allow C-AFM to become a mature technique to study oxide degradation, the impact of this structural damage, i.e., protrusions and holes, on the electrical behavior must be well understood. The physical nature and growth mechanism of protrusions due to a negative substrate voltage (V-s < 0) is, however, debated in literature. In this work, we have studied the chemical composition of the surface protrusions using various analysis techniques (atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy) showing that it consists of oxidized Si. A mechanism is proposed to explain the correlation between the observed surface damage and the measured current during constant voltage stress. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153965]
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
# (joint) last author

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